About us      Products      Partners      Services      Career      Contact
  Aluminum Disks
Anti Bacterial Additives
Fine Clad Materials
Gallium Arsenide Wafers
Gallium Nitride Wafers
Nickel Plated Substrates
Polishing Pads
Screen Printing
High Strengthened Glass

Import-Export Japan-USA
Venture Capital

Kanto Electronics
Kobe Steel
Minato Electronics
New Long
Toyo Kohan

MOVPE Gallium Arsenide Wafers

MOVPE GaAs Wafers for HBTs

Hitachi Cable, released InGaP emitter HBT (Hetero-junction Bipolar Transistor) epi-wafers as our newest product in October 1999 and have been mass-producing since that date. We have already been producing large volumes of AlGaAs emitter HBT epi-wafers grown by the MOVPE method. Please refer to the "What's New" section report entitled "High performance AlGaAs HBT MOVPE wafers" published in April 1998 for further information  

Growth Method

As the name implies, the GaAs wafer is growth via MOVPE (Metal Organic Vapor Phase Epitaxial) process.


Main features of our MOVPE GaAs Wafers for HBTs are :

  • High Carbon doped base layer
  • Low contact resistance of Se doped InGaAs layer
  • High current gain
  • Good reproducibility

Main Applications of our MOVPE GaAs Wafers for FETs are :

  • Low-noise amplifiers
  • Power amplifiers
Contact Address

For more information on our MOVPE GaAs wafers, you can contact the following address :


Manufacturer :

Tomoyuki Hatano
Hitachi Cable America Inc.
10 Bank Street, Suite 680
White Plains, NY 10606
Tel: (914) 993-0990
Fax: (914) 993-0997

Representative :

Joyce Ferrante / Sharon Johnson
Marubeni America Corporation
New York Office
450 Lexington Avenue
New York, NY 10017-3984
Tel: (212) 450-0397
Fax: (212) 450-0730

Contact Marubeni Sunnyvale