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MOVPE Gallium Arsenide Wafers


MOVPE GaAs Wafers for FETs

Hitachi Cable, Ltd. supplies 3", 4" and 6" high quality semi-insulating LEC (Liquid Encapsulated Czochralski) grown GaAs wafers suitable for both ion-implantation and epitaxial growth. Our high quality, long single crystal GaAs wafers provide the advantages of high yield and efficiency necessary to produce high performance GaAs devices such as GaAs FETs and MMICs used in personal mobile communication system, etc..  

Growth Method

As the name implies, the GaAs wafer is growth via MOVPE (Metal Organic Vapor Phase Epitaxial) process.


Features

Main features of our MOVPE GaAs Wafers for FETs (Field Effect Transistor) are :

  • Good Uniformity and reproducibility
  • High efficiency and high breakdown voltage
Applications

Main Applications of our MOVPE GaAs Wafers for FETs are :

  • Low-noise FETs
  • Power FETs
Contact Address

For more information on our MOVPE GaAs wafers, you can contact the following address :

 

Manufacturer :

Tomoyuki Hatano
Hitachi Cable America Inc.
10 Bank Street, Suite 680
White Plains, NY 10606
Tel: (914) 993-0990
Fax: (914) 993-0997

Representative :

Joyce Ferrante / Sharon Johnson
Marubeni America Corporation
New York Office
450 Lexington Avenue
New York, NY 10017-3984
Tel: (212) 450-0397
Fax: (212) 450-0730

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