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Red LED and LD AlGaAs epitaxial wafers Gallium Arsenide Wafers GaAs Wafers MOVPE LPE MBE

Gallium Arsenide Wafers


Hitachi Cable America Inc. supplies high quality semi-conductive gallium arsenide wafers (GaAs wafers) suitable for epitaxial growth (LPE, MOVPE, MBE). The high quality GaAs single crystal wafers provide the advantages of high yield and efficiency necessary to produce high-performance optical GaAs devices.

GaAs Single Crystal Wafers

Semi-conductive single crystal gallium arsenide wafers suitable for epitaxial growth (LPE, MOVPE, MBE). Our high quality GaAs single crystal wafers provide the advantages of high yield and efficiency necessary to produce high-performance optical GaAs devices.
Available both n-type and p-type.

Semi-Insulating GaAs Single Crystal Wafers

Semi-insulating LEC (Liquid Encapsulated Czochralski) grown GaAs wafers suitable for both ion-implantation and epitaxial growth. Our high quality, AU grade (Advanced Uniformity), long GaAs single crystal wafers provide the advantages of high yield and efficiency necessary to produce high performance GaAs devices such as GaAs FETs and MMICs used in personal mobile communication system, etc.
Available wafer size : 3", 4" and 6"

AlGaAs Epitaxial Wafers for Red LEDs

Aluminum gallium arsenide wafers (AlGaAs wafers) for various LED chips or lamps for indoor and outdoor displays. Also suitable for chip LEDs for surface mounting technology.

AlGaAs Epitaxial Wafers for LDs

Aluminum gallium arsenide wafers (AlGaAs wafers) with good statbility on the epitaxial layer characteristics. The epitaxial wafers also feature good uniformity in thickness, AlAs Mole-fraction, carrier concentration.
Thus, it is suitable for LDs applications.

MOVPE GaAs Wafers for HEMTs

MOVPE GaAs wafers with good stability on the characteristics of 2-DEG layer.
The epitaxial wafers main application is for HEMTs.

MOVPE GaAs Wafers for FETs

MOVPE GaAs wafers with high efficiency and high breakdown voltage.
The epitaxial wafers main application is for low noise FET and power FET applications.

MOVPE GaAs Wafers for HBTs

Hitachi Cable Ltd. released InGaP emitter HBT (Hetero-junction Bipolar Transistor) epitaxial GaAs wafers in October 1999 and have been mass-producing since that date. We have already been producing large volumes of AlGaAs emitter HBT epitaxial wafers grown by the MOVPE method.


Gallium Arsenide Hall Sensor


"In response to customer requests, Hitachi Cable Ltd. has recently developed a high sensitivity gallium arsenide hall sensor, which is 1.5 times as sensitive as the standard GaAs hall sensor."

GaAs Hall Sensor