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Gallium Arsenide Single Crystal Wafers

Semi-Insulating GaAs Single-Crystal Wafers (AU Grade: Advanced Uniformity)

Hitachi Cable, Ltd. supplies 3", 4" and 6" high quality semi-insulating LEC (Liquid Encapsulated Czochralski) grown GaAs wafers suitable for both ion-implantation and epitaxial growth. Our high quality, long GaAs single-crystals provide the advantages of high yield and efficiency necessary to produce high performance GaAs devices such as GaAs FETs and MMICs used in personal mobile communication system, etc.


Main features of our semi-insulating GaAs single-crystal wafers are:

  • Large boule size by using LEC puller with multi-zone heater system. One long 4" crystal yields about 300 slices.
  • Good uniformity of electrical properties by applying original 3-step ingot annealing method.
  • Tighter resistivity control by controlling carbon concentration of crystal.
  • Flat & clean surface by applying original polishing & rinsing process.

Main Applications of our semi-insulating GaAs Single-Crystal Wafer are:

  • Low noise FETs (Field Effect Transistor)
  • Power FETs (Field Effect Transistor)
  • MMICs
  • LSIs (Large Scale Integration)
Contact Address

For more information on our gallium arsenide single crystal wafers, you can contact the following address :


Manufacturer :

Tomoyuki Hatano
Hitachi Cable America Inc.
10 Bank Street, Suite 680
White Plains, NY 10606
Tel: (914) 993-0990
Fax: (914) 993-0997

Representative :

Joyce Ferrante / Sharon Johnson
Marubeni America Corporation
New York Office
450 Lexington Avenue
New York, NY 10017-3984
Tel: (212) 450-0397
Fax: (212) 450-0730