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Gallium Arsenide Hall Sensors

MOVPE GaAs Wafers for HBTs

Htachi Cable, Ltd.Manufactures GaAs hall sensors, starting from crystal through to the final products. High qualities of our hall sensors are performed by utilizing materials with the highest quality based on our abundant accumulation of technology as a crystal manufacturer.

In response to costumer's request , we have developed high sensitivity hall sensor, wich have 1.5 times as sensitive as usual GaAs hall sensor.We are sure you will be satisfied with our GaAs hall sensor.If you have any other requirements, do not hesistate to contact us.



Main features of our MOVPE GaAs Wafers for HBTs are :

  • High stability of electrical property:
    Using AU1 grade semi-insulating GaAs wafers which we developed, hall voltage and inner resistance are very stable.
  • AU grade (Advanced Uniformity)
  • Low residual ratio
    By high-precision forming technology of magnetic sensing region, residual ratio is less than +/-5%.
  • Excellent temperature stability:
    GaAs has excellent thermal stability. So small change of hall voltage and of inner resistance by temperature is achieved.
  • A variety of line-up
    The following types are available :
    • Mold type: standard, mini and thin types.
    • Electrical property: high sensitivity, high resistance, etc.

Main Applications of our MOVPE GaAs Wafers for FETs are :

  • Low-noise amplifiers
  • Power amplifiers
Contact Address

For more information on our MOVPE GaAs wafers, you can contact the following address :


Manufacturer :

Tomoyuki Hatano
Hitachi Cable America Inc.
10 Bank Street, Suite 680
White Plains, NY 10606
Tel: (914) 993-0990
Fax: (914) 993-0997

Representative :

Joyce Ferrante / Sharon Johnson
Marubeni America Corporation
New York Office
450 Lexington Avenue
New York, NY 10017-3984
Tel: (212) 450-0397
Fax: (212) 450-0730