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AlGaAs Epitaxial Wafers

AlGaAs Epitaxial Wafers for LDs

Hitachi Cable, Ltd. supplies 3", 4" and 6" high quality semi-insulating LEC (Liquid Encapsulated Czochralski) grown GaAs wafers suitable for both ion-implantation and epitaxial growth. Our high quality, long GaAs single-crystals provide the advantages of high yield and efficiency necessary to produce high performance GaAs devices such as GaAs FETs and MMICs used in personal mobile communication system, etc..  

Growth Method

This GaAs wafer is growth via MOVPE (Metal Organic Vapor Phase Epitaxial) process


Main features of our AlGaAs epitaxial wafers for LDs are:

  • Good reproducibility and stability in epitaxial layer characteristics
  • Good uniformity in thickness, AlAs Mole-fraction, carrier concentration

With its excellent characteristics, this AlGaAs epitaxial wafer main is most suitable for LDs applications.

Contact Address

For more information on our AlGaAs epitaxial wafers, you can contact the following address :


Manufacturer :

Tomoyuki Hatano
Hitachi Cable America Inc.
10 Bank Street, Suite 680
White Plains, NY 10606
Tel: (914) 993-0990
Fax: (914) 993-0997

Representative :

Joyce Ferrante / Sharon Johnson
Marubeni America Corporation
New York Office
450 Lexington Avenue
New York, NY 10017-3984
Tel: (212) 450-0397
Fax: (212) 450-0730